Ключевые слова
Аннотация
Tezisda o‘tish metallari dixalkogenidlari ( , , ) asosidagi tranzistorlarda kontakt qarshiligini ( ) kamaytirishning zamonaviy yondashuvlari — yarimmetall (Bi, Sb), van-der-Waals (vdW) va zonasi gibridlangan kontaktlar, legirlash hamda kontakt chegarasi xossalarini optimallashtirish — tahlil qilingan. Monoqatlamli uchun qiymati an’anaviy metallarda ~1 kΩ·μm bo‘lgan holda, yarimmetall kontaktlarda 42–123 Ω·μm gacha pasayishi ko‘rsatilgan.
Библиографические ссылки
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