Keywords
Abstract
The results of growing erbium-doped epitaxial silicon layers using two different growth modes: conventional molecular beam epitaxy (MBE) and solid-phase epitaxy (SPE) are presented. It has been shown that an erbium-doped silicon layer, when deposited by SPE onto a cold substrate and subsequent annealing, exhibits more intense photoluminescence at a wavelength of 1.54 µm than layers grown by MBE.
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