Keywords
Abstract
The emission spectra of deep levels of ZnSe/(001) GaAs epitaxial films with different thicknesses grown by the MPE method were determined by photoluminescence. ZnSe/(001) GaAs epitaxial films consist of three regions in terms of concentrations of other elements and defects. The energy shift of the bands indicates a decrease in the compression stress in the pit and the tensile stresses in the buffer layer. One of the ways to influence the characteristics of the A2B6/GaAs interface of structures is the use of thin intermediate layers, which can delay the processes of interdiffusion of film and substrate components.
References
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